Effects of electron cyclotron resonance etching on the ambient (100) GaAs surface
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Effects of electron cyclotron resonance etching on the ambient (100) GaAs surface
Photoreflectance has been used to study the electronic behavior of the ambient ~100! GaAs surface and its modification by etching in a Cl2 /Ar plasma generated by an electron-cyclotron resonance ~ECR! source. We observed two pinning positions for ambient ~100! GaAs, with n-GaAs pinning near midgap and p-GaAs pinning near the valance band. ECR etching shifts the Fermi level of p-GaAs toward midg...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 1995
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.114275